A. Laades - Concepedia

Author

A. Laades

CiS Forschungsinstitut für Mikrosensorik GmbH

Also Known As

A. Laades, Abdelazize Laades, Andrä, G., Angermann, H., Blech, M., Kibizov, R., Laades, A., Lawerenz, A., Neckermann, K., Ronning, C.

Publications

587

Citations

H-Index

Concepts

All Affiliations

CiS Forschungsinstitut für Mikrosensorik GmbH Helmholtz-Zentrum Berlin für Materialien und Energie Roth and Rau (Germany)Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute Technische Universität Ilmenau

About

A. Laades is an author at CiS Forschungsinstitut für Mikrosensorik GmbH specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	12	12	465
2	Engineering	11	11	419
3	Electrical Engineering	9	9	391
4	Chemical Engineering	2	2	34
5	Materials Engineering	2	2	44

A. Laades

Publications

478

Citations

H-Index

Page 1

	Year	Citations
Physical aspects of a-Si:H/c-Si hetero-junction solar cells M. Schmidt, Lars Korte, A. Laades, Thin Solid Films Electrical EngineeringEngineeringPhysical AspectsApplied PhysicsSilicon On Insulator	2007	153
Detailed analysis of the microwave-detected photoconductance decay in crystalline silicon Kevin Lauer, A. Laades, H. Übensee, Journal of Applied Physics EngineeringIntegrated CircuitsSilicon On InsulatorSemiconductor DeviceSemiconductors	2008	83
Electronic states in a-Si:H/c-Si heterostructures Lars Korte, A. Laades, M. Schmidt Journal of Non-Crystalline Solids Semiconductor TechnologyElectronic StatesApplied PhysicsMultilayer HeterostructuresSilicon On Insulator	2006	46
PECVD-AlOx/SiNx Passivation Stacks on Silicon: Effective Charge Dynamics and Interface Defect State Spectroscopy Jan Amaru Töfflinger, A. Laades, Caspar Leendertz, Energy Procedia Electrical EngineeringCrystalline SiliconEngineeringPecvd-alox/sinx Passivation StacksPhysics	2014	39
PECVD-AlOx/SiNx passivation stacks on wet chemically oxidized silicon: Constant voltage stress investigations of charge dynamics and interface defect states Jan Amaru Töfflinger, A. Laades, Lars Korte, Solar Energy Materials and Solar Cells Materials ScienceMaterials EngineeringElectrical EngineeringSemiconductor DeviceEngineering	2014	32
Characterization and optimization of the interface quality in amorphous/crystalline silicon heterojunction solar cells Karsten von Maydell, Lars Korte, A. Laades, Journal of Non-Crystalline Solids Materials ScienceElectrical EngineeringInterface QualityEngineeringOrganic Solar Cell	2006	24
Effect of wet‐chemical substrate pretreatment on electronic interface properties and recombination losses of <i>a</i> ‐Si:H/<i>c</i> ‐Si and <i>a</i> ‐SiN<sub>x</sub>:H/<i>c</i> ‐Si hetero‐interfaces H. Angermann, F. Wünsch, Marinus Kunst, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics EngineeringOptoelectronic DevicesElectronic Interface PropertiesPhotovoltaicsSemiconductors	2010	20
Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates T. Riemann, J. Christen, A. Kaschner, Applied Physics Letters Materials ScienceGa AccumulationOptical MaterialsPatterned Gan/sapphire SubstratesHomogeneous Aluminum Content	2002	16
Wet Chemical Oxidation of Silicon Surfaces Prior to the Deposition of All-PECVD AlO<sub>x</sub>/<i>a</i>-SiN<sub>x</sub> Passivation Stacks for Silicon Solar Cells A. Laades, H. Angermann, Hans Peter Sperlich, Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena EngineeringVacuum DeviceChemical DepositionPhotovoltaicsChemical Engineering	2012	14
Physical and Technological Aspects of a-Si:H/c-Si Hetero-Junction Solar Cells M. Schmidt, H. Angermann, E. Conrad, EngineeringSemiconductor MaterialsOptoelectronic DevicesIntegrated CircuitsSilicon On Insulator	2006	14

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