Baruch Feldman

Simulation of junctionless Si nanowire transistors with 3 nm gate length

Lida Ansari, Baruch Feldman, Giorgos Fagas et al. · Applied Physics Letters · 2010 · 101 citations · Full text

Engineering, Nanodevices, Integrated Circuits +16

Simulations of gated Si nanowires and 3-nm junctionless transistors

Lida Ansari, Baruch Feldman, Giorgos Fagas et al. · arXiv (Cornell University) · 2010 · 71 citations · Full text

Device Modeling, Si Nanowire Transistors, Electrical Engineering +13

Simulation of grain boundary effects on electronic transport in metals, and detailed causes of scattering

Baruch Feldman, Seongjun Park, Michael Haverty et al. · physica status solidi (b) · 2010 · 68 citations · Full text

Subthreshold behavior of junctionless silicon nanowire transistors from atomic scale simulations

Lida Ansari, Baruch Feldman, Giorgos Fagas et al. · Solid-State Electronics · 2011 · 22 citations

Device Modeling, Electrical Engineering, Engineering +10

First Principle-Based Analysis of Single-Walled Carbon Nanotube and Silicon Nanowire Junctionless Transistors

Lida Ansari, Baruch Feldman, Giorgos Fagas et al. · IEEE Transactions on Nanotechnology · 2013 · 16 citations · Full text