G. G. B. de Souza

Multicoincidence mass spectrometry applied to hexamethyldisilane excited around the silicon 2p edge

M. Simon, Thomas W. LeBrun, Rodrigo Martins et al. · The Journal of Physical Chemistry · 1993 · 88 citations

Engineering, Chemical Analysis, Silicon 2P +19

Selective resonant photoionization processes near the Si 2<i>p</i>edge of tetramethylsilane

Paul Morin, G. G. B. de Souza, and I. Nenner et al. · Physical Review Letters · 1986 · 58 citations

Engineering, Excitation Energy Transfer, Chemistry +18

Electron energy loss spectra of the silicon 2p, 2s, carbon 1s and valence shells of tetramethylsilane

R. N. S. Sodhi, S. Daviel, C.E. Brion et al. · Journal of Electron Spectroscopy and Related Phenomena · 1985 · 46 citations

Valence Shells, Ii-vi Semiconductor, Engineering +8

Relaxation processes following excitation and ionization of SiF4 in the vicinity of the silicon 2<i>p</i> threshold. I. Electronic relaxation processes

G. G. B. de Souza, Paul Morin, I. Nenner · The Journal of Chemical Physics · 1989 · 41 citations

Relaxation Process, Silicon 2, Engineering +23

Angle resolved photoelectron study of resonances near the Si 2<i>p</i> edge of the Si(CH3)4 molecule

G. G. B. de Souza, Paul Morin, I. Nenner · The Journal of Chemical Physics · 1985 · 36 citations

Engineering, Absorption Spectroscopy, Chemistry +21