Tomoji Ohishi - Concepedia

Author

Tomoji Ohishi

Shibaura Institute of Technology ORCID

Also Known As

T Ohishi, T. Ohishi, Tomoji OHISHI, Tomoji Ohishi

103

Publications

762

Citations

H-Index

Concepts

All Affiliations

Shibaura Institute of Technology Nagoya University Hitachi (Japan)National Institute for Materials Science Japan Science and Technology Agency

About

Tomoji Ohishi is an author at Shibaura Institute of Technology specializing in engineering, materials science, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	17	329
2	Applied Physics	9	9	184
3	Chemistry	8	8	171
4	Chemical Engineering	6	6	86
5	Natural Sciences	1	1	11

Tomoji Ohishi

Publications

620

Citations

H-Index

Page 1

	Year	Citations
Synthesis and properties of tantalum oxide films prepared by the sol-gel method using photo-irradiation Tomoji Ohishi, S. Maekawa, Akira Katoh Journal of Non-Crystalline Solids Materials SciencePhotochemistryPhoto-electrochemical CellChemistrySol-gel Method	1992	59
Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors Toshihide Nabatame, Erika Maeda, Mari Inoue, Applied Physics Express Wide-bandgap SemiconductorEngineeringHafnium SilicateGate DielectricSemiconductor Device	2019	37
Effect of ultrasound sonication on electroplating of iridium Takashi Ohsaka, Motohiro Isaka, Katsuhiko Hirano, Ultrasonics Sonochemistry Materials ScienceSonoelectrochemistryEngineeringUltrasound SonicationPower Ultrasound	2007	35
Evaluation of SiO2 thin films prepared by sol-gel method using photoirradiation S. Maekawa, Tomoji Ohishi Journal of Non-Crystalline Solids Materials ScienceEngineeringSurface ScienceApplied PhysicsThin Films	1994	33
Characteristics of Al <sub>2</sub> O <sub>3</sub> /native oxide/n-GaN capacitors by post-metallization annealing Kazuya Yuge, Toshihide Nabatame, Yoshihiro Irokawa, Semiconductor Science and Technology	2019	27
Electrical properties of anatase TiO2 films by atomic layer deposition and low annealing temperature Toshihide Nabatame, Akihiko Ohi, Toyohiro Chikyo, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Materials EngineeringMaterials ScienceMaterial AnalysisEngineeringOxide Electronics	2014	26
Photoluminescence behavior of SiO2 prepared by sol–gel processing Sachiko Okuzaki, Kojiro Okude, Tomoji Ohishi Journal of Non-Crystalline Solids Optical MaterialsPhotoluminescencePhotoluminescence BehaviorChemistryLuminescence Property	2000	25
Cobalt(III)-Peroxo Complexes Containing 1,2-Bis(dimethylphosphino)ethane (dmpe) or 1,3-Bis(dimethylphosphino)propane (dmpp). Molecular Structures of [Co(O2)(dmpe)2]B(C6H5)4 and [Co(O2)(dmpp)2]BF4·H2O Tomoji Ohishi, Kazuo Kashiwabara, Junnosuke Fujita, Bulletin of the Chemical Society of Japan	1986	22
Preparation, and Structural and Spectroscopic Characterization of Cobalt(III) Phosphine Complexes of the Type, [Co(CN)4−2<i>n</i>(acac)<i>n</i>(P)2](<i>n</i>−1)+ (acac=Acetylacetonate Ion, <i>n</i>=0,1,2, and P=P(CH3)<i>x</i>(C6H5)3−<i>x</i>, <i>x</i>=0,1,2,3) Kazuo Kashiwabara, Katsuaki Katoh, Tomoji Ohishi, Bulletin of the Chemical Society of Japan	1982	21
Synthesis of SiO2 thin films by sol-gel method using photoirradiation and molecular structure analysis S. Maekawa, Kojiro Okude, Tomoji Ohishi Journal of Sol-Gel Science and Technology Materials ScienceEngineeringMolecular Structure AnalysisPhotocatalysisChemistry	1994	21

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