Ryota Hodo

3D-Stacked CAAC-In-Ga-Zn Oxide FETs with Gate Length of 72nm

Masashi Oota, Yoshinori Ando, Kazuki Tsuda et al. · 2019 · 63 citations

Engineering, Electrical Engineering, Materials Science +14

30-nm-channel-length c-axis aligned crystalline In-Ga-Zn-O transistors with low off-state leakage current and steep subthreshold characteristics

Shinpei Matsuda, T. Hiramatsu, R. Honda et al. · 2015 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

5,291‐ppi OLED display enabled by monolithic integration of <i>C</i>‐axis‐aligned crystalline IGZO FET and Si CMOS

Kiyoshi Katō, Hidetomo Kobayashi, Hideaki Shishido et al. · Journal of the Society for Information Display · 2022 · 18 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

Novel Analog in-Memory Compute with &gt; 1 nA Current/Cell and 143.9 TOPS/W Enabled by Monolithic Normally-off Zn-rich CAAC-IGZO FET-on-Si CMOS Technology

H. Baba, Satoru Ohshita, Takashi Hamada et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 14 citations

Engineering, Computer Engineering, Electrical Engineering +14

10‐1: Layout of 1.50‐inch, 3207‐ppi OLED Display with OSLSI/SiLSI Structure Capable of Division Driving Fabricated through VLSI Process with Side‐by‐Side Patterning by Photolithography

Toshihiko Saito, Toshiki Mizuguchi, Yuki Okamoto et al. · SID Symposium Digest of Technical Papers · 2022 · 14 citations

Engineering, Computer Engineering, Electrical Engineering +14