M. Sznajder

Similarities of the band structure of In₄Se₃ and InSe under pressure and peculiarities of the creation of the band gap

M. Sznajder, K. Z. Rushchanskii, L. Yu. Kharkhalis · physica status solidi (b) · 2006 · 37 citations

Crystal Structure, Engineering, Se 3 +20

Elementary energy bands in the band structure of the narrow-band-gap semiconductor CdSb

Ivetta Slipukhina, M. Sznajder, K. Z. Rushchanskii · Physical Review B · 2004 · 21 citations

Crystal Structure, Engineering, Rhombic Crystals +21

DFT study on point defects migration through the pseudomorphic and lattice-matched InN/GaN interfaces

Roman Hrytsak, Paweł Kempisty, Ewa Grzanka et al. · Computational Materials Science · 2020 · 19 citations

Wide-bandgap Semiconductor, Engineering, Physics +8

Modeling of the Point Defect Migration across the AlN/GaN Interfaces—Ab Initio Study

Roman Hrytsak, Paweł Kempisty, Ewa Grzanka et al. · Materials · 2022 · 18 citations · Full text

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +15

Phonon Spectrum of the Layered In4Se3 Crystal

K. Z. Rushchanskii, M. Sznajder · physica status solidi (b) · 1999 · 17 citations

Engineering, Acoustic Metamaterial, Physical Acoustic +17