Tobias Meisch

Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge

Georg Rossbach, Martin Feneberg, Marcus Röppischer et al. · Physical Review B · 2011 · 53 citations

Aluminium Nitride, Optical Materials, Engineering +20

Response of GaN to energetic ion irradiation: conditions for ion track formation

Marko Karlušić, Roland Kozubek, H. Lebius et al. · Journal of Physics D Applied Physics · 2015 · 47 citations · Full text

Materials Science, Ion Implantation, Engineering +11

Composition dependent valence band order in c-oriented wurtzite AlGaN layers

Benjamin Neuschl, J. Helbing, Manuel Knab et al. · Journal of Applied Physics · 2014 · 27 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16

Growth and doping of semipolar GaN grown on patterned sapphire substrates

F. Scholz, Tobias Meisch, Marian Caliebe et al. · Journal of Crystal Growth · 2014 · 27 citations

Materials Science, Wide-bandgap Semiconductor, Semipolar Gan Grown +8

Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells

Torsten Langer, Manuela Klisch, Fedor Alexej Ketzer et al. · physica status solidi (b) · 2015 · 24 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +18