Concepedia
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Publications
3
Citations
33
H-Index
Active since
2018
Affiliations
Institute of Microelectronics(Current)
State Grid Corporation of China (China)
Tokushima University
Chinese Academy of Sciences
Caiping Wan is an author at Institute of Microelectronics specializing in applied physics, materials science, and engineering.
Top concepts
EngineeringApplied PhysicsMaterial ScienceMaterials Engineering
Publications per year
2018–2020
Ultrahigh-temperature oxidation of 4H-SiC (0 0 0 1) and gate oxide reliability dependence on oxidation temperature
Caiping Wan, Hengyu Xu, Jinghua Xia et al. · Journal of Crystal Growth · 2019 · 13 citations
Materials Science, Materials Engineering, Oxidation Temperature +6
Influence on curvature induced stress to the flatband voltage and interface density of 4H-SiC MOS structure
Hengyu Xu, Caiping Wan, Ling Sang et al. · Journal of Crystal Growth · 2018 · 10 citations
Effects of sequential annealing in low oxygen partial-pressure and NO on 4H-SiC MOS devices
Zhipeng Luo, Caiping Wan, Zhi Jin et al. · Semiconductor Science and Technology · 2020 · 10 citations
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