Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer

Han‐Joon Kim, Min Hyuk Park, Yu Jin Kim, +6

Applied Physics Letters

EngineeringThin Film Process TechnologyFe FilmFerroelectric ApplicationEpitaxial Growth +15

Ferroelectricity in undoped-HfO₂ thin films induced by deposition temperature control during atomic layer deposition

Kyung Do Kim, Min Hyuk Park, Hong Jip Kim, +6

Journal of Materials Chemistry C

Materials ScienceOxide HeterostructuresEngineeringFerroelectric ApplicationOxide Electronics +11

Scale-up and optimization of HfO2-ZrO2 solid solution thin films for the electrostatic supercapacitors

Keum Do Kim, Young Hwan Lee, Taehong Gwon, +7

Nano Energy

Materials ScienceChemical EngineeringSupercapacitorsEngineeringHybrid Capacitor +6

Multicolor Changeable Optical Coating by Adopting Multiple Layers of Ultrathin Phase Change Material Film

Sijung Yoo, Taehong Gwon, Taeyong Eom, +2

ACS Photonics

Materials ScienceOptical MaterialsEngineeringOptical PropertiesPcm Film +12

Conformal Formation of (GeTe₂)_{(1–<i>x</i>)}(Sb₂Te₃)_<i>x</i> Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories

Taeyong Eom, Seol Choi, Byung Joon Choi, +9

Chemistry of Materials

Non-volatile MemoryEngineeringEmerging Memory TechnologyChemistryPhase Change Memory +16

Bipolar resistive switching behavior of an amorphous Ge₂Sb₂Te₅thin films with a Te layer

Sijung Yoo, Taeyong Eom, Taehong Gwon, +1

Nanoscale

Atomic Layer Deposition of GeTe Films Using Ge{N[Si(CH₃)₃]₂}₂, {(CH₃)₃Si}₂Te, and Methanol

Taehong Gwon, Taeyong Eom, Sijung Yoo, +7

Chemistry of Materials

SemiconductorsMaterials ScienceChemical EngineeringEpitaxial GrowthEngineering +11

Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl₃, Sb(OC₂H₅)₃, and {(CH₃)₃Si}₂Te and Their Reaction Mechanisms

Taehong Gwon, Taeyong Eom, Sijung Yoo, +8

Chemistry of Materials

Materials ScienceSemiconductorsEpitaxial GrowthEngineeringCrystalline Defects +13

Combined Ligand Exchange and Substitution Reactions in Atomic Layer Deposition of Conformal Ge₂Sb₂Te₅ Film for Phase Change Memory Application

Taeyong Eom, Taehong Gwon, Sijung Yoo, +6

Chemistry of Materials

Substitution ReactionsEngineeringChemistryChemical DepositionPhase Change Memory +15

Influence of the Kinetic Adsorption Process on the Atomic Layer Deposition Process of (GeTe₂)_{(1–<i>x</i>)}(Sb₂Te₃)_<i>x</i> Layers Using Ge⁴⁺–Alkoxide Precursors

Taeyong Eom, Taehong Gwon, Sijung Yoo, +5

Chemistry of Materials

Materials ScienceMaterials EngineeringKinetic Adsorption ProcessEpitaxial GrowthEngineering +13