Sailesh Rajasekaran

Oxygen Vacancy Transition in HfO<i>_x</i>‐Based Flexible, Robust, and Synaptic Bi‐Layer Memristor for Neuromorphic and Wearable Applications

Aftab Saleem, Amit Singh, Sailesh Rajasekaran et al. · Advanced Materials Technologies · 2022 · 63 citations

Engineering, Electrical Engineering, Materials Engineering +16

Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

Aftab Saleem, Firman Mangasa Simanjuntak, Sridhar Chandrasekaran et al. · Applied Physics Letters · 2021 · 58 citations · Full text

Engineering, Electrical Engineering, Materials Science +14

Enhanced Switching Properties in TaO_x Memristors Using Diffusion Limiting Layer for Synaptic Learning

Pei-Yu Jung, Debashis Panda, Sridhar Chandrasekaran et al. · IEEE Journal of the Electron Devices Society · 2020 · 52 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +12

Fast, Highly Flexible, and Transparent TaO_<i>x</i>-Based Environmentally Robust Memristors for Wearable and Aerospace Applications

Sailesh Rajasekaran, Firman Mangasa Simanjuntak, Debashis Panda et al. · ACS Applied Electronic Materials · 2020 · 49 citations

Engineering, Materials Engineering, Materials Science +17

Flexible Ta₂O₅/WO₃-Based Memristor Synapse for Wearable and Neuromorphic Applications

Sailesh Rajasekaran, Firman Mangasa Simanjuntak, Sridhar Chandrasekaran et al. · IEEE Electron Device Letters · 2021 · 37 citations

Engineering, Materials Engineering, Materials Science +15