Yongfang Jia

Existence of Resistive Switching Memory and Negative Differential Resistance State in Self-Colored MoS₂/ZnO Heterojunction Devices

Mayameen S. Kadhim, Feng Yang, Bai Sun et al. · ACS Applied Electronic Materials · 2019 · 63 citations

Engineering, Electrical Engineering, Materials Science +17

A resistive switching memory device with a negative differential resistance at room temperature

Mayameen S. Kadhim, Feng Yang, Bai Sun et al. · Applied Physics Letters · 2018 · 53 citations

Natural Sciences, Materials Engineering, Materials Science +17

Bi2S3-modified TiO2 nanotube arrays: easy fabrication of heterostructure and effective enhancement of photoelectrochemical property

Fanggong Cai, Feng Yang, Yongfang Jia et al. · Journal of Materials Science · 2013 · 48 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effect of anodic oxidation time on resistive switching memory behavior based on amorphous TiO2 thin films device

Yanmei Yu, Feng Yang, Shuangsuo Mao et al. · Chemical Physics Letters · 2018 · 41 citations

Natural Sciences, Materials Engineering, Materials Science +16

Photoelectrochemical and charge transfer properties of SnS/TiO2 heterostructure nanotube arrays

Yongfang Jia, Feng Yang, Fanggong Cai et al. · Electronic Materials Letters · 2013 · 33 citations

Natural Sciences, Materials Engineering, Materials Science +14