Jyh-Shyang Wang

Room-temperature 2.2-μm InAs-InGaAs-InP highly strained multiquantum-well lasers grown by gas-source molecular beam epitaxy

Jyh-Shyang Wang, Hao-Hsiung Lin, Li-Wei Sung · IEEE Journal of Quantum Electronics · 1998 · 33 citations

Materials Science, Strain Compensation, Epilayer Quality +11

Modification of Photon Emission Statistics from Single Colloidal CdSe Quantum Dots by Conductive Materials

Hui-Wen Cheng, Chi‐Tsu Yuan, Jyh-Shyang Wang et al. · The Journal of Physical Chemistry C · 2014 · 25 citations

Photon Emission Statistics, Quantum Photonics, Engineering +19

Temperature dependence of the band gap in C60 crystals

Kuan‐Cheng Chiu, Jyh-Shyang Wang, Chung-You Lin · Journal of Applied Physics · 1996 · 24 citations · Full text

Optical Materials, Engineering, Temperature Dependence +16

Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy

Jyh-Shyang Wang, Hao‐Hsiung Lin · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 22 citations

Solid-state Lighting, Engineering, Different Nitrogen Concentration +15

Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy

Jyh-Shyang Wang, Hao‐Hsiung Lin, Liwei Song et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 21 citations

Semiconductors, Optical Materials, Engineering +13