Jeng‐Jie Huang

The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

Tao Li, Q. Y. Wei, Alec M. Fischer et al. · Applied Physics Letters · 2013 · 22 citations

Engineering, Materials Engineering, Materials Science +17

X-ray diffraction study on an InGaN∕GaN quantum-well structure of prestrained growth

Wen-Yu Shiao, Chi‐Feng Huang, Tsung-Yi Tang et al. · Journal of Applied Physics · 2007 · 18 citations

Natural Sciences, Materials Engineering, Materials Science +17

Free carrier accumulation at cubic AlGaN/GaN heterojunctions

Q. Y. Wei, T. Li, Jeng‐Jie Huang et al. · Applied Physics Letters · 2012 · 15 citations

Engineering, Materials Science, Physics +17

Emission Efficiency Dependence on the p-GaN Thickness in a High-Indium InGaN/GaN Quantum-Well Light-Emitting Diode

Che‐Hao Liao, Chih‐Yen Chen, Horng-Shyang Chen et al. · IEEE Photonics Technology Letters · 2011 · 10 citations

Engineering, Electrical Engineering, Materials Science +17