Q. Y. Wei

Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells

T. Li, Alec M. Fischer, Q. Y. Wei et al. · Applied Physics Letters · 2010 · 60 citations

Engineering, Materials Engineering, Materials Science +17

High temperature bending properties and failure mechanism of 3D needled C/SiC composites up to 2000 ℃

Xiang-bin Du, Diansen Li, Q. Y. Wei et al. · Journal of the European Ceramic Society · 2022 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +16

Compositional instability in InAlN/GaN lattice-matched epitaxy

Q. Y. Wei, T. Li, Yu Huang et al. · Applied Physics Letters · 2012 · 36 citations · Full text

Engineering, Materials Engineering, Materials Science +17

In‐plane polarization of GaN‐based heterostructures with arbitrary crystal orientation

Q. Y. Wei, T. Li, Zhihao Wu et al. · physica status solidi (a) · 2010 · 22 citations

Engineering, Materials Engineering, Materials Science +17

The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

Tao Li, Q. Y. Wei, Alec M. Fischer et al. · Applied Physics Letters · 2013 · 22 citations

Engineering, Materials Engineering, Materials Science +17