Bhagwan Ram Raad

A New Design Approach of Dopingless Tunnel FET for Enhancement of Device Characteristics

Bhagwan Ram Raad, Sukeshni Tirkey, Dheeraj Sharma et al. · IEEE Transactions on Electron Devices · 2017 · 139 citations

Device Modeling, Semiconductors, Electrical Engineering +15

Drain Work Function Engineered Doping-Less Charge Plasma TFET for Ambipolar Suppression and RF Performance Improvement: A Proposal, Design, and Investigation

Bhagwan Ram Raad, Dheeraj Sharma, P. N. Kondekar et al. · IEEE Transactions on Electron Devices · 2016 · 116 citations

Device Modeling, Electrical Engineering, Engineering +11

Dielectric and work function engineered TFET for ambipolar suppression and RF performance enhancement

Bhagwan Ram Raad, Kaushal Nigam, Dheeraj Sharma et al. · Electronics Letters · 2016 · 101 citations · Full text

Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement

Bhagwan Ram Raad, Kaushal Nigam, Dheeraj Sharma et al. · Superlattices and Microstructures · 2016 · 100 citations

Electrical Engineering, Engineering, Nanoelectronics +8

Impactful study of dual work function, underlap and hetero gate dielectric on TFET with different drain doping profile for high frequency performance estimation and optimization

Dharmendra Singh Yadav, Dheeraj Sharma, Bhagwan Ram Raad et al. · Superlattices and Microstructures · 2016 · 54 citations

Device Modeling, Electrical Engineering, Engineering +8