H.T. Danga

Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4 H -silicon carbide

V.E. Gora, A. Chawanda, C. Nyamhere et al. · Physica B Condensed Matter · 2017 · 32 citations

Materials Science, Materials Engineering, Electrical Engineering +6

Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range

V.E. Gora, F.D. Auret, H.T. Danga et al. · Materials Science and Engineering B · 2019 · 31 citations

Electrical Engineering, Engineering, Applied Physics +4

The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes

E. Omotoso, W.E. Meyer, P.J. Janse van Rensburg et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2017 · 20 citations

Electrical Characteristics, Electrical Engineering, Engineering +4

Electrical characterisation of deep level defects created by bombarding the n-type 4H-SiC with 1.8 MeV protons

E. Omotoso, Alexander T. Paradzah, P.J. Janse van Rensburg et al. · Surface and Coatings Technology · 2018 · 15 citations

Electrical Engineering, Engineering, Physics +10

Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs

S.M. Tunhuma, F.D. Auret, J.M. Nel et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2017 · 10 citations

Electrical Engineering, Semiconductor Device, Engineering +5