M. P. Alegre

Critical boron-doping levels for generation of dislocations in synthetic diamond

M. P. Alegre, D. Araújo, Alexandre Fiori et al. · Applied Physics Letters · 2014 · 38 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Gauthier Chicot, Alexandre Fiori, P. N. Volpe et al. · Journal of Applied Physics · 2014 · 29 citations · Full text

Natural Sciences, Materials Science, Physics +17

TEM study of defects versus growth orientations in heavily boron‐doped diamond

Fernando Lloret, D. Araújo, M. P. Alegre et al. · physica status solidi (a) · 2015 · 18 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

D. Araújo, M. P. Alegre, Alexandre Fiori et al. · Applied Physics Letters · 2013 · 14 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Dislocation generation mechanisms in heavily boron-doped diamond epilayers

D. Araújo, Fernando Lloret, Gonzalo Alba et al. · Applied Physics Letters · 2021 · 14 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17