Applied Physics Letters · 2014 · 38 citations · 33 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsSolid MechanicsSolid State PhysicsDefect CharacterizationDefect ModelingDefectsDislocation MechanicsDopingStrain EngineeringCritical ConcentrationDislocation BehaviorDislocation EvolutionDislocation MechanismsDislocationsGrowth DirectionsStrain EffectsTransmission Electron Microscopy Of Dislocations
Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH4/H2 molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 × 1020at/cm3 range in the ⟨111⟩ direction and at 3.2 × 1021 at/cm3 for the ⟨001⟩ one. Strain related effects induced by the doping are shown not to be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism.
33
Defects in epitaxial multilayers
J. W. Matthews, A. E. Blakeslee · Journal of Crystal Growth · 1974 · 1.5K citations
High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
Jan Isberg, J. Hammersberg, Erik M. J. Johansson et al. · Science · 2002 · 1.3K citations
Metal-insulator transition and superconductivity in boron-doped diamond
T. Klein, P. Achatz, J. Kačmarčík et al. · Physical Review B · 2007 · 193 citations · Full text