Statistics
Publications
23
Citations
911
H-Index
15
Active since
1994
R. Kurps is an author at Leibniz Institute for High Performance Microelectronics specializing in engineering, semiconductor devices, and materials science.
Publications per year
1994–2014
23
23
Suppressed diffusion of boron and carbon in carbon-rich silicon
H. Rücker, B. Heinemann, Wilfried Röpke et al. · Applied Physics Letters · 1998 · 134 citations
Novel collector design for high-speed SiGe:C HBTs
B. Heinemann, H. Rücker, R. Barth et al. · 2003 · 107 citations
Engineering, Electrical Engineering, Electronic Materials +16
A complementary BiCMOS technology with high speed npn and pnp SiGe:C HBTs
B. Heinemann, R. Barth, D. Bolze et al. · 2004 · 48 citations
Engineering, Electrical Engineering, Electronic Materials +16
Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification
H. Rücker, B. Heinemann, D. Bolze et al. · 2003 · 48 citations
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