Jinwei Qi

Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications

Jinwei Qi, Xu Yang, Xin Li et al. · IEEE Transactions on Power Electronics · 2018 · 71 citations

Sic Mosfet, Electrical Engineering, Engineering +13

An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss

Kai Tian, Anders Hallén, Jinwei Qi et al. · IEEE Transactions on Electron Devices · 2019 · 50 citations

Electrical Engineering, Semiconductor Device, Switching Loss +14

Comprehensive Characterization of the 4H-SiC Planar and Trench Gate MOSFETs From Cryogenic to High Temperature

Kai Tian, Anders Hallén, Jinwei Qi et al. · IEEE Transactions on Electron Devices · 2019 · 42 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +14

Comprehensive Assessment of Avalanche Operating Boundary of SiC Planar/Trench MOSFET in Cryogenic Applications

Jinwei Qi, Xu Yang, Xin Li et al. · IEEE Transactions on Power Electronics · 2020 · 27 citations · Full text

Engineering, Power Electronic Systems, Avalanche Ruggedness +16

Dynamic performance of 4H-SiC power MOSFETs and Si IGBTs over wide temperature range

Jinwei Qi, Kai Tian, Zhangsong Mao et al. · 2018 · 25 citations

Static Characterization, Electrical Engineering, Engineering +10