Concepedia

M. Nishida

MN

Statistics

Publications

5

Citations

122

H-Index

5

Active since

1973

Affiliations

Sanyo (Japan)(Current)

M. Nishida is an author at Sanyo (Japan) specializing in engineering, semiconductor devices, and electrical engineering.

Publications per year

1973–1981

5

Publications

5

An anomalous increase of threshold voltages with shortening the channel lengths for deeply boron-implanted N-channel MOSFET's

M. Nishida, Hidetoshi Onodera · IEEE Transactions on Electron Devices · 1981 · 43 citations

Engineering, Electrical Engineering, Materials Science +10

Effects of diffusion-induced dislocations on the excess low-frequency noise

M. Nishida · IEEE Transactions on Electron Devices · 1973 · 30 citations

Engineering, Electrical Engineering, Materials Science +17

Temperature dependence of MOSFET characteristics in weak inversion

M. Nishida, H. Ohyabu · IEEE Transactions on Electron Devices · 1977 · 18 citations

Engineering, Electrical Engineering, Microelectronics +13

Depletion approximation analysis of the differential capacitance&#8212;Voltage characteristics of an MOS structure with nonuniformly doped semiconductors

M. Nishida · IEEE Transactions on Electron Devices · 1979 · 17 citations

Engineering, Electrical Engineering, Microelectronics +16

An improved definition for the onset of heavy inversion in an MOS structure with nonuniformly doped semiconductors

M. Nishida, M. Aoyama · IEEE Transactions on Electron Devices · 1980 · 14 citations

Engineering, Electrical Engineering, Materials Science +13

1–5 of 5