Ji Young Min - Concepedia

Author

Ji Young Min

Sejong University

Also Known As

Jang Hyeok Park, Ji Young Min

Publications

274

Citations

H-Index

Concepts

All Affiliations

Sejong University University of Biskra Korea Electric Power Corporation (South Korea)Hyundai Motor Group (South Korea)Gachon University

About

Ji Young Min is an author at Sejong University specializing in applied physics, oxide heterostructures, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	3	3	51
2	Applied Physics	3	3	51
3	Materials Science	3	3	51
4	Electrical Engineering	2	2	27
5	Chemistry	1	1	16

Ji Young Min

Publications

157

Citations

H-Index

Page 1

	Year	Citations
Ag<sub>2</sub>O/β-Ga<sub>2</sub>O<sub>3</sub> Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability Sangbin Park, Taejun Park, Joon Hui Park, ACS Applied Materials & Interfaces	2022	47
Temperature-Dependent Self-Powered Solar-Blind Photodetector Based on Ag2O/β-Ga2O3 Heterojunction Taejun Park, Sangbin Park, Joon Hui Park, Nanomaterials	2022	25
Interface engineering of p-type quaternary metal oxide semiconductor interlayer-embedded β-Ga2O3 Schottky barrier diode Chowdam Venkata Prasad, Joon Hui Park, Ji Young Min, Materials Today Physics Materials ScienceOxide HeterostructuresSemiconductor TechnologyEngineeringOxide Electronics	2022	24
Hole diffusion effect on the minority trap detection and non-ideal behavior of NiO/<i>β</i>-Ga2O3 heterojunction Madani Labed, Saud Alotaibi, Ji Young Min, Applied Physics Letters Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesChemistrySemiconductor Device	2023	16
Device engineering of p-CuAlO2/β-Ga2O3 interface: A staggered-gap band-alignment Chowdam Venkata Prasad, Madani Labed, Mohammad Tauquir Alam Shamim Shaikh, Materials Today Advances	2023	12
Interface engineering of β-Ga2O3 MOS-type Schottky barrier diode using an ultrathin HfO2 interlayer Madani Labed, Ji Young Min, Jung Yeop Hong, Surfaces and Interfaces Materials ScienceOxide HeterostructuresElectrical EngineeringSemiconductor TechnologyEngineering	2022	11
Reduction of Fermi-Level Pinning and Controlling of Ni/β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Height Using an Ultrathin HfO<sub>2</sub> Interlayer Madani Labed, Ji Young Min, Eun Seo Jo, ACS Applied Electronic Materials	2023	11
Non-damaging growth and band alignment of p-type NiO/β-Ga<sub>2</sub>O<sub>3</sub> heterojunction diodes for high power applications Ji Young Min, Madani Labed, Chowdam Venkata Prasad, Journal of Materials Chemistry C	2024	11

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