Ken'ichiro Takakura Ken'ichiro Takakura

Room Temperature 1.6 µm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi₂ Active Region

Takashi Suemasu, Yoichiro Negishi Yoichiro Negishi, Ken'ichiro Takakura Ken'ichiro Takakura et al. · Japanese Journal of Applied Physics · 2000 · 193 citations

Room Temperature Electroluminescence, Optical Materials, Engineering +18

Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes

Takashi Suemasu, Yoichiro Negishi Yoichiro Negishi, Ken'ichiro Takakura Ken'ichiro Takakura et al. · Applied Physics Letters · 2001 · 78 citations

Engineering, Optoelectronic Devices, Resultant Strain +16

Control of the Conduction Type of Nondoped High Mobility β-FeSi₂ Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios

Ken'ichiro Takakura Ken'ichiro Takakura, Takashi Suemasu, Yoshihiro Ikura Yoshihiro Ikura et al. · Japanese Journal of Applied Physics · 2000 · 43 citations

Materials Science, Semiconductors, Semiconductor Technology +13

Improvement of the Electrical Properties of β-FeSi₂ Films on Si (001) by High-Temperature Annealing

Ken'ichiro Takakura Ken'ichiro Takakura, Takashi Suemasu, Noriyoshi Hiroi et al. · Japanese Journal of Applied Physics · 2000 · 35 citations

High-temperature Annealing, Engineering, Electrical Properties +16

Growth of Continuous and Highly (100)-Oriented β-FeSi₂ Films on Si(001) from Si/Fe Multilayers with SiO₂ Capping and Templates

Takashi Suemasu, Noriyoshi Hiroi, Tetsuo Fujii et al. · Japanese Journal of Applied Physics · 1999 · 29 citations

Materials Engineering, Materials Science, Sio 2 +13