Mingyue Qu

Influence of Tungsten Doping on the Performance of Indium–Zinc–Oxide Thin-Film Transistors

Honglei Li, Mingyue Qu, Qun Zhang · IEEE Electron Device Letters · 2013 · 65 citations

Materials Science, Semiconductors, Electrical Engineering +15

Influence of channel layer thickness on the stability of amorphous indium zinc oxide thin film transistors

Yang Zhao, Jianwen Yang, Ting Meng et al. · Materials Letters · 2015 · 51 citations

Materials Science, Electrical Engineering, Engineering +8

Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions

Mingyue Qu, Chih-Hsiang Chang, Ting Meng et al. · physica status solidi (a) · 2016 · 27 citations

Materials Science, Semiconductor Technology, Electrical Engineering +15

H2O adsorption on amorphous In-Ga-Zn-O thin-film transistors under negative bias stress

Jianwen Yang, Po‐Yung Liao, Ting‐Chang Chang et al. · Applied Physics Letters · 2017 · 24 citations

Materials Science, Electrical Engineering, Engineering +15

Amorphous nickel incorporated tin oxide thin film transistors

Jianwen Yang, Jinhua Ren, Dong Lin et al. · Journal of Physics D Applied Physics · 2017 · 17 citations

Materials Science, Semiconductors, Electrical Engineering +12