D. G. Lin

Native hole trap in bulk GaAs and its association with the double-charge state of the arsenic antisite defect

J. Łagowski, D. G. Lin, T.-P. Chen et al. · Applied Physics Letters · 1985 · 120 citations

Semiconductors, Arsenic Antisite Defect, Semiconductor Technology +14

Identification of oxygen-related midgap level in GaAs

J. Łagowski, D. G. Lin, Takashi Aoyama et al. · Applied Physics Letters · 1984 · 116 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +12

Inverted thermal conversion—GaAs, a new alternative material for integrated circuits

J. Łagowski, H. C. Gatos, C. H. Kang et al. · Applied Physics Letters · 1986 · 78 citations

Semiconductors, Materials Science, Electrical Engineering +15

Fermi energy control of vacancy coalescence and dislocation density in melt-grown GaAs

J. Łagowski, H. C. Gatos, Takashi Aoyama et al. · Applied Physics Letters · 1984 · 31 citations

Semiconductors, Materials Science, Wide-bandgap Semiconductor +15

Real and apparent effects of strong electric fields on the electron emission from midgap levels EL2 and EL0 in GaAs

J. Łagowski, D. G. Lin, H. C. Gatos et al. · Applied Physics Letters · 1984 · 24 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12