Toshihiko Nishimori

Surface structures of Si(100)-Al phases

T. Ide, Toshihiko Nishimori, T. Ichinokawa · Surface Science · 1989 · 61 citations

Natural Sciences, Materials Engineering, Materials Science +14

Formation and atomic configuration of Si(100)c(4 × 4) structure

Koichi Kato, T. Ide, Toshihiko Nishimori et al. · Surface Science · 1988 · 59 citations

Natural Sciences, Materials Science, Physics +12

n -type high-conductive epitaxial diamond film prepared by gas source molecular beam epitaxy with methane and tri-n-butylphosphine

Toshihiko Nishimori, Koji Nakano, Hitoshi Sakamoto et al. · Applied Physics Letters · 1997 · 28 citations

Engineering, Materials Engineering, Materials Science +17

New SiGe bipolar transistors and p-i-n diodes for power switching

Fumihiko Hirose, Y. Souda, K. Nakano et al. · IEEE Transactions on Electron Devices · 2001 · 15 citations

Engineering, Electrical Engineering, Materials Science +17

Methane adsorption and hydrogen isothermal desorption kinetics on a C(001)–(1×1) surface

Toshihiko Nishimori, Hitoshi Sakamoto, Yuji Takakuwa et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1995 · 12 citations

Natural Sciences, Chemistry, Materials Science +17