Mario S. Alessandrino

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo et al. · Applied Physics Letters · 2022 · 40 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

Patrick Fiorenza, Corrado Bongiorno, Filippo Giannazzo et al. · Applied Surface Science · 2021 · 30 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy

Patrick Fiorenza, Mario S. Alessandrino, Beatrice Carbone et al. · Nanomaterials · 2021 · 18 citations · Full text

Engineering, Electrical Engineering, Biomedical Imaging +14

A look underneath the SiO₂/4H-SiC interface after N₂O thermal treatments

Patrick Fiorenza, Filippo Giannazzo, Lukas K. Swanson et al. · Beilstein Journal of Nanotechnology · 2013 · 15 citations · Full text

Engineering, Materials Engineering, Materials Science +17