Y. Kitagawara

Transmission Electron Microscope Observation of “IR Scattering Defects” in As-Grown Czochralski Si Crystals

Masahiro Kato, Tomosuke Yoshida, Yasuhiro Ikeda et al. · Japanese Journal of Applied Physics · 1996 · 121 citations

Semiconductors, Materials Science, Engineering +13

Electron traps in dislocation-free In-alloyed liquid encapsulated Czochralski GaAs and their annealing properties

Y. Kitagawara, N. Noto, Tohru Takahashi et al. · Applied Physics Letters · 1986 · 25 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Dependence of Epitaxial Layer Defect Morphology on Substrate Particle Contamination of Si Epitaxial Wafer

M. Iwabuchi, Koichi Mizushima, Masaya Mizuno et al. · Journal of The Electrochemical Society · 2000 · 17 citations · Full text

Engineering, Substrate Particle Contamination, Si Epitaxial Wafer +19

Evaluation of Oxygen‐Related Carrier Recombination Centers in High‐Purity Czochralski‐Grown Si Crystals by the Bulk Lifetime Measurements

Y. Kitagawara, T. Yoshida, T. Hamaguchi et al. · Journal of The Electrochemical Society · 1995 · 16 citations

Materials Science, Semiconductors, Semiconductor Technology +14

Evaluation of Oxygen Precipitated Silicon Crystals by Deep‐Level Photoluminescence at Room Temperature and Its Mapping

Y. Kitagawara, Ryoji Hoshi, Takao Takenaka · Journal of The Electrochemical Society · 1992 · 16 citations

Semiconductors, Room Temperature, Deep‐level Photoluminescence +11