W. D. Ohlsen

Evidence for spatially indirect recombination in Ga0.52In0.48P

M. C. DeLong, W. D. Ohlsen, I. Viohl et al. · Journal of Applied Physics · 1991 · 91 citations

Engineering, Ordered Ga0.52in0.48p, Genetics +21

Defects in Rutile. III. Optical and Electrical Properties of Impurities and Charge Carriers

O. W. Johnson, W. D. Ohlsen, Paul I. Kingsbury · Physical Review · 1968 · 89 citations

Defects in Rutile. I. Electron Paramagnetic Resonance of Interstitially Doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Rutile

Paul I. Kingsbury, W. D. Ohlsen, O. W. Johnson · Physical Review · 1968 · 57 citations

Engineering, Magnetic Resonance, Solid-state Chemistry +19

Kinetics of the metastable optically induced ESR in<i>a</i>-Si:H

Charles Lee, W. D. Ohlsen, P. C. Taylor et al. · Physical review. B, Condensed matter · 1985 · 51 citations

Photonics, Epitaxial Growth, Induced Esr +15

Defects in Rutile. II. Diffusion of Interstitial Ions

Paul I. Kingsbury, W. D. Ohlsen, O. W. Johnson · Physical Review · 1968 · 37 citations

Materials Science, Solid-state Ionic, Rutile Unit Cell +15