T. Teuschler

Nanometer-scale field-induced oxidation of Si(111):H by a conducting-probe scanning force microscope: Doping dependence and kinetics

T. Teuschler, K. Mahr, Shuichi Miyazaki et al. · Applied Physics Letters · 1995 · 117 citations

Natural Sciences, Materials Engineering, Materials Science +15

Analysis of random telegraph noise in large-area amorphous double-barrier structures

T. Teuschler, Martin Hundhausen, L. Ley et al. · Physical review. B, Condensed matter · 1993 · 27 citations

Engineering, Materials Science, Physics +16

Nanometer-scale modification of the tribological properties of Si(100) by scanning force microscope

T. Teuschler, K. Mahr, Shuichi Miyazaki et al. · Applied Physics Letters · 1995 · 22 citations

Natural Sciences, Materials Engineering, Materials Science +17

Kinetics of field-induced oxidation of hydrogen-terminated Si(111)

L. Ley, T. Teuschler, K. Mahr et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 19 citations

Natural Sciences, Materials Engineering, Materials Science +17