W. F. J. Slijkerman - Concepedia

Author

W. F. J. Slijkerman

Institute for Atomic and Molecular Physics

Also Known As

W. F. J. Slijkerman, W. Slijkerman, W.F.J Slijkerman, W.F.J. Slijkerman

Publications

592

Citations

H-Index

Concepts

All Affiliations

Institute for Atomic and Molecular Physics Philips (Netherlands)Waseda University University of Newcastle Australia Shell (Netherlands)

About

W. F. J. Slijkerman is an author at Institute for Atomic and Molecular Physics specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	507
2	Applied Physics	7	7	277
3	Education	1	1	20
4	Medicine	1	1	61
5	Chemical Engineering	1	1	24

W. F. J. Slijkerman

Publications

568

Citations

H-Index

Page 1

	Year	Citations
A Practical Approach To Obtain Primary Drainage Capillary Pressure Curves From Nmr Core And Log Data W. F. J. Slijkerman, J. P. Hofman, W.J. Looyestijn, Petrophysics – The SPWLA Journal of Formation Evaluation and Reservoir Description EngineeringHydrogeophysicsEarth ScienceReservoir EngineeringGeotechnical Engineering	2001	174
Elemental composition of β-Sic(001) surface phases studied by medium energy ion scattering Shiro Hara, W. F. J. Slijkerman, J. F. van der Veen, Surface Science Materials ScienceSurface PhasesSurface CharacterizationEngineeringElemental Composition	1990	104
Determination of surface relaxivity from NMR diffusion measurements W. F. J. Slijkerman, J. P. Hofman Magnetic Resonance Imaging Relaxation ProcessMagnetic Resonance SpectroscopySpectroscopyNmr Diffusion MeasurementsElectron Paramagnetic Resonance	1998	61
The interaction of Sb overlayers with Si(001) W. F. J. Slijkerman, P. M. Zagwijn, J. F. van der Veen, Surface Science EngineeringPhysicsSb OverlayersSurface ScienceApplied Physics	1992	44
Formation of the Ni-SiC(001) interface studied by high-resolution ion backscattering W. F. J. Slijkerman, Axel Fischer, J. F. van der Veen, Journal of Applied Physics Ni DepositionEngineeringVacuum DeviceSilicon On InsulatorSemiconductors	1989	38
Growth of uniform epitaxial CoSi2 films on Si(111) Axel Fischer, W. F. J. Slijkerman, Kosuke Nakagawa, Journal of Applied Physics Materials SciencePseudomorphic Cosi2 FilmsEngineeringSilicon On InsulatorSurface Science	1988	36
Structural characterization of an Sb delta-doping layer in silicon W. F. J. Slijkerman, P. M. Zagwijn, J. F. van der Veen, Applied Physics Letters Materials ScienceElectrical EngineeringEpitaxial GrowthEngineeringPhysics	1989	25
Oxidation of Al(111) D.J. O’Connor, E. R. Wouters, A. W. Denier van der Gon, Surface Science Inorganic ChemistryChemical EngineeringEngineeringCorrosionOxidation Resistance	1993	24
Multiphase Flow Measurement Using Multiple Energy Gamma Ray Absorption (MEGRA) Composition Measurement AM Scheers, W. F. J. Slijkerman SPE Annual Technical Conference and Exhibition EngineeringEnvironmental MonitoringHydrogeophysicsMeasurementFlow Cell	1996	20
X-ray reflectivity of an Sb delta-doping layer in silicon W. F. J. Slijkerman, J.M. Gay, P. M. Zagwijn, Journal of Applied Physics Materials ScienceSurface CharacterizationEngineeringPhysicsSurface Analysis	1990	18

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