A. Parkhomovsky is an author at University of Minnesota specializing in applied physics, engineering, and physics.
Top concepts
PhysicsEngineeringApplied PhysicsMaterial ScienceThin FilmsNanotechnologyNanoelectronicsSurface ScienceMicroelectronicsCrystalline Defects
Publications per year
1999–2001
3
3
Structure and composition of GaN(0001) A and B surfaces
R. Held, G. Nowak, B. Ishaug et al. · Journal of Applied Physics · 1999 · 72 citations
Materials Engineering, Materials Science, Wide-bandgap Semiconductor +13
A rate equation model for the growth of GaN on GaN(0001) by molecular beam epitaxy
R. Held, B. Ishaug, A. Parkhomovsky et al. · Journal of Applied Physics · 2000 · 16 citations
Rows per page
1–3 of 3