Megumi Yakabe

$1\times$ - to $2\times$ -nm perpendicular MTJ Switching at Sub-3-ns Pulses Below $100~\mu$ A for High-Performance Embedded STT-MRAM for Sub-20-nm CMOS

Daisuke Saida, Saori Kashiwada, Megumi Yakabe et al. · IEEE Transactions on Electron Devices · 2016 · 21 citations

Engineering, Electrical Engineering, Materials Science +17

Sub-3 ns pulse with sub-100 µA switching of 1x–2x nm perpendicular MTJ for high-performance embedded STT-MRAM towards sub-20 nm CMOS

Daisuke Saida, Saori Kashiwada, Megumi Yakabe et al. · 2016 · 14 citations

Engineering, Computer Engineering, Electrical Engineering +17

Low-Current High-Speed Spin-Transfer Switching in a Perpendicular Magnetic Tunnel Junction for Cache Memory in Mobile Processors

Daisuke Saida, Naoharu Shimomura, E. Kitagawa et al. · IEEE Transactions on Magnetics · 2014 · 11 citations

Engineering, Computer Engineering, Electrical Engineering +15