Adarsh Rajashekhar

Sub-<i>kT/q</i> Switching in Strong Inversion in PbZr_0.52Ti_0.48O₃ Gated Negative Capacitance FETs

Sudeb Dasgupta, Adarsh Rajashekhar, Kausik Majumdar et al. · IEEE Journal on Exploratory Solid-State Computational Devices and Circuits · 2015 · 117 citations · Full text

Semiconductor Technology, Electrical Engineering, Engineering +14

Ferroelectric/Ferroelastic domain wall motion in dense and porous tetragonal lead zirconate titanate films

Raegan L. Johnson‐Wilke, Rudeger H. T. Wilke, Margeaux Wallace et al. · IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control · 2015 · 34 citations

Engineering, Piezoelectric Properties, Domain Reorientation +17

Thermal atomic layer etching of amorphous and crystalline Al2O3 films

Jessica A. Murdzek, Adarsh Rajashekhar, Raghuveer S. Makala et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2021 · 30 citations

Engineering, Thermal Ale, Thin Film Process Technology +16

<i>In situ</i> laser annealing during growth of Pb(Zr0.52Ti0.48)O3 thin films

Adarsh Rajashekhar, Austin J. Fox, S. S. N. Bharadwaja et al. · Applied Physics Letters · 2013 · 18 citations

Materials Science, Optical Materials, Engineering +13

Microstructure Evolution of <i>In Situ</i> Pulsed‐Laser Crystallized Pb(Zr _0.52 Ti _0.48 )O ₃ Thin Films

Adarsh Rajashekhar, H. R. Zhang, Bharadwaja Srowthi et al. · Journal of the American Ceramic Society · 2015 · 14 citations