Byung-Kwan Chun

13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate

Wontaeck Jung, Hyung-Gon Kim, Do-Bin Kim et al. · 2024 · 28 citations

Hardware Security, Key Device, Electrical Engineering +15

Polar Quantizer for Wireless Receivers: Theory, Analysis, and CMOS Implementation

Peyman Nazari, Byung-Kwan Chun, Fred Tzeng et al. · IEEE Transactions on Circuits and Systems I Regular Papers · 2013 · 24 citations

Wireless Communications, Engineering, Quantum Computing +10

A 1.8-Gb/s/Pin 16-Tb NAND Flash Memory Multi-Chip Package With F-Chip for High-Performance and High-Capacity Storage

Daehoon Na, Jang-woo Lee, Seon‐Kyoo Lee et al. · IEEE Journal of Solid-State Circuits · 2021 · 13 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +12

A Synthesis-Based Bandwidth Enhancement Technique for CMOS Amplifiers: Theory and Design

Deyi Pi, Byung-Kwan Chun, Payam Heydari · IEEE Journal of Solid-State Circuits · 2010 · 12 citations

Passive Network, Electrical Engineering, Engineering +10

A 1.8 Gb/s/pin 16Tb NAND Flash Memory Multi-Chip Package with F-Chip of Toggle 4.0 Specification for High Performance and High Capacity Storage Systems

Jangwoo Lee, Daehoon Na, Anil Kavala et al. · 2020 · 11 citations