Shingo Mochizuki

Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates

Masatomo Sumiya, N. Ogusu, Yasuyo Yotsuda et al. · Journal of Applied Physics · 2003 · 44 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14

Structural analysis of Si-doped AlGaN/GaN multi-quantum wells

Tetsuya Nakamura, Shingo Mochizuki, Shinji Terao et al. · Journal of Crystal Growth · 2002 · 24 citations

Electrical Engineering, Engineering, Applied Physics +5

Growth Mechanism and Characterization of Low-Dislocation-Density AlGaN Single Crystals Grown on Periodically Grooved Substrates

Theeradetch Detchprohm, S. Sano, Shingo Mochizuki et al. · physica status solidi (a) · 2001 · 22 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +14

Crystal Growth of High-Quality AlInN/GaN Superlattices and of Crack-Free AlN on GaN: Their Possibility of High Electron Mobility Transistor

S. Yamaguchi, Masayoshi Kosaki, Yoichi Watanabe et al. · physica status solidi (a) · 2001 · 14 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +10

Reduction of threading dislocation density in AlXGa1−XN grown on periodically grooved substrates

Shingo Mochizuki, Theeradetch Detchprohm, Shigekazu Sano et al. · Journal of Crystal Growth · 2002 · 10 citations

Materials Engineering, Materials Science, Aluminium Nitride +9