Sheng‐Han Yi - Concepedia

Author

Sheng‐Han Yi

National Taiwan University ORCID

Also Known As

S. S. Yi, Shanghai Yi, Sheng-Han Yi, Sheng‐Han Yi, Song Stephen Yi

Publications

410

Citations

H-Index

Concepts

All Affiliations

National Taiwan University

About

Sheng‐Han Yi is an author at National Taiwan University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	13	374
2	Applied Physics	10	12	342
3	Electrical Engineering	6	6	176
4	Materials Engineering	5	5	123
5	Chemical Engineering	1	1	10

Sheng‐Han Yi

Publications

401

Citations

H-Index

Page 1

	Year	Citations
Modulation of ferroelectricity and antiferroelectricity of nanoscale ZrO2 thin films using ultrathin interfacial layers Sheng‐Han Yi, Bo-Ting Lin, Tzu-Yao Hsu, Journal of the European Ceramic Society Materials ScienceMultiferroicsFerroelasticsEngineeringFerroelectric Application	2019	57
Sub-7-nm textured ZrO2 with giant ferroelectricity K.T. Huang, Sheng‐Han Yi, Yu‐Sen Jiang, Acta Materialia Materials ScienceMultiferroicsFerroelasticsEngineeringFerroelectric Application	2020	47
Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO2 thin films by the TiN capping engineering Chunyuan Wang, Chin-I Wang, Sheng‐Han Yi, Materials & Design EngineeringThin Film Process TechnologyFerroelectric ApplicationTin Capping EngineeringNanoscale Science	2020	39
Ultra-high energy storage density and scale-up of antiferroelectric TiO<sub>2</sub>/ZrO<sub>2</sub>/TiO<sub>2</sub> stacks for supercapacitors Sheng‐Han Yi, Hsin-Chih Lin, Miin‐Jang Chen Journal of Materials Chemistry A Materials ScienceMaterials EngineeringSupercapacitorsElectrical EngineeringEngineering	2021	39
Enhancement of energy storage for electrostatic supercapacitors through built-in electric field engineering Sheng‐Han Yi, Yu-Chen Chan, Chi-Lin Mo, Nano Energy Materials ScienceElectrical EngineeringSupercapacitorsEngineeringElectrostatic Supercapacitors	2022	32
High-<i>K</i> Gate Dielectrics Treated with <i>in Situ</i> Atomic Layer Bombardment Teng-Jan Chang, Wei-Hao Lee, Chin-I Wang, ACS Applied Electronic Materials EngineeringVacuum DeviceChemical DepositionSemiconductor DeviceSemiconductors	2019	31
Sharp Transformation across Morphotropic Phase Boundary in Sub‐6 nm Wake‐Up‐Free Ferroelectric Films by Atomic Layer Technology Chun‐Ho Chuang, Ting‐Yun Wang, Chun‐Yi Chou, Advanced Science	2023	27
Atomic tailoring of low-thermal-budget and nearly wake-up-free ferroelectric Hf0.5Zr0.5O2 nanoscale thin films by atomic layer annealing Teng-Jan Chang, Yu‐Sen Jiang, Sheng‐Han Yi, Applied Surface Science Materials ScienceEngineeringFerroelectric ApplicationNanotechnologyNanoelectronics	2022	26
Low-temperature crystallization and paraelectric–ferroelectric phase transformation in nanoscale ZrO<sub>2</sub> thin films induced by atomic layer plasma treatment Sheng‐Han Yi, K.T. Huang, Hsin-Chih Lin, Journal of Materials Chemistry C Materials ScienceMaterials EngineeringMultiferroicsEngineeringFerroelectric Application	2020	25
Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment K.T. Huang, Teng-Jan Chang, Chunyuan Wang, Materials Science in Semiconductor Processing Materials ScienceElectrical EngineeringEngineeringLeakage Current LoweringStress-induced Leakage Current	2020	23

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