Sudipta Chakraborty

A Broadside-Coupled Meander-Line Resonator in 0.13-$\mu \text{m}$ SiGe Technology for Millimeter-Wave Application

Sudipta Chakraborty, Yang Yang, Xi Zhu et al. · IEEE Electron Device Letters · 2016 · 105 citations

Millimeter-wave Application, Chip Size, Millimeter Wave Technology +12

A $K$ -Band Frequency Doubler With 35-dB Fundamental Rejection Based on Novel Transformer Balun in 0.13- $\mu \text{m}$ SiGe Technology

Sudipta Chakraborty, Leigh E. Milner, Xi Zhu et al. · IEEE Electron Device Letters · 2016 · 86 citations

Electrical Engineering, Chip Size, Engineering +8

Comparative analysis of Boron, nitrogen, and phosphorous doping in monolayer of semi-metallic Xenes (Graphene, Silicene, and Germanene) - A first principle calculation based approach

Aditya Tiwari, Naresh Bahadursha, Joshna Palepu et al. · Materials Science in Semiconductor Processing · 2022 · 36 citations

Materials Science, Semi-metallic Xenes, Graphene Nanomeshes +9

An Edge-Coupled Marchand Balun With Partial Ground for Excellent Balance in 0.13 <i>μ</i>m SiGe Technology

Sudipta Chakraborty, Leigh E. Milner, Xi Zhu et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 2020 · 33 citations

Electrical Engineering, Edge-coupled Marchand Balun, Engineering +9

Comparative analysis of strain engineering on the electronic properties of homogenous and heterostructure bilayers of MoX2 (X = S, Se, Te)

Joshna Palepu, Pranav Anand, Pradyumna Parshi et al. · Micro and Nanostructures · 2022 · 27 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +10