Y.H. Fu

Physical mechanisms of endurance degradation in TMO-RRAM

B. Chen, Yang Lu, Bin Gao et al. · 2011 · 166 citations

Engineering, Materials Engineering, Materials Science +13

Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect

Yang Lu, B. Chen, Bin Gao et al. · 2012 · 21 citations

Engineering, Materials Engineering, Materials Science +16

Multilevel resistive switching characteristics in Ag/SiO<inf>2</inf>/Pt RRAM devices

Dapeng Yu, L. F. Liu, Bin Chen et al. · 2011 · 12 citations

Engineering, Electrical Engineering, Materials Science +16

A comprehensive taxonomy of prompt engineering techniques for large language models

Yaoyang Liu, Zhen Zheng, Feng Zhang et al. · Frontiers of Computer Science · 2025 · 12 citations · Full text

Computing, Computer Science, Instruction +10

FLEX-CIM: A Flexible Kernel Size 1-GHz 181.6-TOPS/W 25.63-TOPS/mm² Analog Compute-in-Memory Macro

Y.H. Fu, Wei-Han Yu, Ka-Fai Un et al. · IEEE Journal of Solid-State Circuits · 2024 · 11 citations

Engineering, Computer Engineering, Computer Science +17