J. Griesche

Substitutional carbon incorporation in epitaxial Si1−yCy alloys on Si(001) grown by molecular beam epitaxy

H. J. Osten, J. Griesche, Silvia Scalese · Applied Physics Letters · 1999 · 59 citations

Epitaxial Si1−ycy, Engineering, Computational Chemistry +20

CISCuT––solar cells and modules on the basis of CuInS2 on Cu-tape

Michael Winkler, J. Griesche, I. Konovalov et al. · Solar Energy · 2004 · 31 citations

Materials Engineering, Materials Science, Electrical Engineering +6

Molecular beam epitaxial growth and characterization of ZnSe on GaAs

J. Reichow, J. Griesche, Norbert Hoffmann et al. · Journal of Crystal Growth · 1993 · 27 citations

Ii-vi Semiconductor, Electrical Engineering, Engineering +4

Influence of interstitial carbon defects on electron transport in strained Si1−yCy layers on Si(001)

H. J. Osten, J. Griesche, P. Gaworzewski et al. · Applied Physics Letters · 2000 · 23 citations

Engineering, Si1−ycy Layers, Silicon On Insulator +17

Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys

A Hattab, J.-L. Perrossier, F. Meyer et al. · Materials Science and Engineering B · 2002 · 19 citations

Materials Engineering, Engineering, Physics +4