Proceedings of the 2012 IEEE International Electron Devices Meeting (IEDM)

Subir Parui, Kumari Gaurav Rana, T. Banerjee

International Electron Devices Meeting

Electrical EngineeringElectronic DevicesEngineeringElectronic EngineeringApplied Physics +3

A molecular spin-photovoltaic device

Xiangnan Sun, Saül Vélez, Ainhoa Atxabal, +6

Science

Gate‐Controlled Energy Barrier at a Graphene/Molecular Semiconductor Junction

Subir Parui, Luca Pietrobon, David Ciudad, +5

Advanced Functional Materials

SemiconductorsElectrical EngineeringElectronic DevicesEngineeringElectronic Materials +11

Energy Level Alignment at Metal/Solution‐Processed Organic Semiconductor Interfaces

Ainhoa Atxabal, Slawomir Braun, Thorsten Arnold, +10

Advanced Materials

Spin communication over 30 <i>µ</i> m long channels of chemical vapor deposited graphene on SiO ₂

Zewdu M. Gebeyehu, Subir Parui, Juan F. Sierra, +7

2D Materials

Spin doping using transition metal phthalocyanine molecules

Ainhoa Atxabal, Mário Ribeiro, Subir Parui, +6

Nature Communications

Tuning the charge flow between Marcus regimes in an organic thin-film device

Ainhoa Atxabal, T. Arnold, Subir Parui, +7

Nature Communications

Graphene as an electrode for solution-processed electron-transporting organic transistors

Subir Parui, Mário Ribeiro, Ainhoa Atxabal, +3

Nanoscale

Probing electron transport across a LSMO/Nb:STO heterointerface at the nanoscale

Kumari Gaurav Rana, Subir Parui, T. Banerjee

Physical Review B

Oxide HeterostructuresSchottky Barrier HeightLow TemperaturesEngineeringPhysics +9

Hot electron transport in a strongly correlated transition-metal oxide

Kumari Gaurav Rana, Takeaki Yajima, Subir Parui, +5

Scientific Reports