P. Stallhofer

Interlaboratory Determination of the Calibration Factor for the Measurement of the Interstitial Oxygen Content of Silicon by Infrared Absorption

A. Baghdadi, W Murray Bullis, M.C. Croarkin et al. · Journal of The Electrochemical Society · 2006 · 150 citations

Ir Round Robin, Chemical Engineering, Infrared Absorption +15

Surface cyclotron resonance in Si under uniaxial stress

P. Stallhofer, J. P. Kotthaus, J. F. Koch · Solid State Communications · 1976 · 53 citations

Surface Cyclotron Resonance, Engineering, Physics +4

Deep Level Luminescence Ralated to Thermal Donors in Silicon

Michio Tajima, P. Stallhofer, D. Huber · Japanese Journal of Applied Physics · 1983 · 46 citations

Semiconductors, Inorganic Chemistry, Photoluminescence +14

Effects of uniaxial stress on the cyclotron resonance in inversion layers on Si (100)

P. Stallhofer, J. P. Kotthaus, G. Abstreiter · Solid State Communications · 1979 · 27 citations

Materials Science, Engineering, Physics +8

Czochralski's Creative Mistake: A Milestone on the Way to the Gigabit Era

Jürgen Evers, Peter Klüfers, Rudolf Staudigl et al. · Angewandte Chemie International Edition · 2003 · 22 citations

Single Crystals, Engineering, Crystal Growth Technology +17