Haonan Feng

Publications

Citations

H-Index

2021

Active since

Affiliations

Xinjiang Technical Institute of Physics & Chemistry(Current)

Haonan Feng is an author at Xinjiang Technical Institute of Physics & Chemistry specializing in single event effects, electrical engineering, and engineering.

ORCID

Top concepts

EngineeringPower ElectronicsSingle Event EffectsElectrical EngineeringMedicineNanoelectronicsMicroelectronicsRadiation EffectsRadiation TestingElectronic Engineering

Publications per year

2021–2023

Publications

Impact of switching frequencies on the TID response of SiC power MOSFETs

Sheng Yang, Xiaowen Liang, Jiangwei Cui et al. · Journal of Semiconductors · 2021 · 20 citations

Electrical Engineering, Radiation Testing, Engineering +14

Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs

Haonan Feng, S. Yang, Xiaowen Liang et al. · Journal of Nanoelectronics and Optoelectronics · 2021 · 12 citations

Electrical Engineering, Engineering, Power Device +10

Special Degradation Effects of <sup>60</sup>Co <i>γ</i>-Rays Irradiation on Electrical Parameters of SiC MOSFETs

Haonan Feng, Xiaowen Liang, Xiaojuan Pu et al. · IEEE Transactions on Nuclear Science · 2023 · 11 citations

Total Ionizing Dose Effects of 60Co γ-Ray Radiation on Split-Gate SiC MOSFETs

Haonan Feng, Xiaowen Liang, Xiaojuan Pu et al. · Electronics · 2023 · 10 citations · Full text

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