Seogwoo Lee

Effects of Basal Stacking Faults on Electrical Anisotropy of Nonpolar a-Plane ($11\bar{2}0$) GaN Light-Emitting Diodes on Sapphire Substrate

Kwang Hyeon Baik, Yong Gon Seo, Soon‐Ku Hong et al. · IEEE Photonics Technology Letters · 2010 · 31 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +14

Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process

Katsushi Fujii, Seogwoo Lee, Jun‐Seok Ha et al. · Applied Physics Letters · 2009 · 30 citations

Engineering, Leakage Current Improvement, Conventional Leds +16

Novel buffer layer for the growth of GaN on c‐sapphire

Wookhyun Lee, Seogwoo Lee, Hiroki Goto et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2006 · 13 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11

Raman and emission characteristics of <i>a</i>-plane InGaN/GaN blue-green light emitting diodes on <i>r</i>-sapphire substrates

Yanqun Dong, Jae‐Ho Song, Ho‐Jong Kim et al. · Journal of Applied Physics · 2011 · 10 citations

Photonics, Electrical Engineering, Phonon Modes +13