Arame Thiam

Nanoscale domain wall devices with magnetic tunnel junction read and write

Eline Raymenants, Olivier Bultynck, Danny Wan et al. · Nature Electronics · 2021 · 109 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +14

Wafer-scale integration of double gated WS₂-transistors in 300mm Si CMOS fab

Inge Asselberghs, Quentin Smets, T. Schram et al. · 2020 · 55 citations

Engineering, Electrical Engineering, Materials Science +17

WS<inf>2</inf> transistors on 300 mm wafers with BEOL compatibility

T. Schram, Quentin Smets, Benjamin Groven et al. · 2017 · 41 citations

Engineering, Materials Engineering, Materials Science +15

Scaling of double-gated WS₂ FETs to sub-5nm physical gate length fabricated in a 300mm FAB

Quentin Smets, T. Schram, Devin Verreck et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 27 citations

Engineering, Electrical Engineering, Materials Science +12

Fabrication and room temperature characterization of trilayer junctions for the development of superconducting qubits on 300 mm wafers

Danny Wan, Xiaoyu Piao, Laurent Souriau et al. · Japanese Journal of Applied Physics · 2021 · 19 citations · Full text

Natural Sciences, Electrical Engineering, Materials Science +14