Binjian Zeng

Grain Size Engineering of Ferroelectric Zr-doped HfO₂for the Highly Scaled Devices Applications

Jiajia Liao, Binjian Zeng, Qi Sun et al. · IEEE Electron Device Letters · 2019 · 84 citations

Engineering, Thin Film Process Technology, Grain Size Distribution +16

Program/Erase Cycling Degradation Mechanism of HfO₂-Based FeFET Memory Devices

Binjian Zeng, Min Liao, Jiajia Liao et al. · IEEE Electron Device Letters · 2019 · 69 citations

Device Modeling, Electrical Engineering, Engineering +12

Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO₂‐Based Ferroelectric Field‐Effect Transistor

Binjian Zeng, Chen Liu, Siwei Dai et al. · Advanced Functional Materials · 2021 · 66 citations

Non-volatile Memory, Engineering, Ferroelectric Random-access Memory +18

2-Bit/Cell Operation of Hf_0.5Zr_0.5O₂Based FeFET Memory Devices for NAND Applications

Binjian Zeng, Min Liao, Qiangxiang Peng et al. · IEEE Journal of the Electron Devices Society · 2019 · 63 citations · Full text

Materials Science, Electrical Engineering, Electronic Devices +15

Compatibility of HfN Metal Gate Electrodes With Hf_0.5Zr_0.5O₂ Ferroelectric Thin Films for Ferroelectric Field-Effect Transistors

Binjian Zeng, Wenwu Xiao, Jiajia Liao et al. · IEEE Electron Device Letters · 2018 · 62 citations

Materials Science, Semiconductor Technology, Electrical Engineering +15