Youya Wagatsuma

Thermoelectric Si1−<i>x</i>Ge<i>x</i> and Ge epitaxial films on Si(001) with controlled composition and strain for group IV element-based thermoelectric generators

Tatsuhiko Taniguchi, Takafumi Ishibe, Ryoya Hosoda et al. · Applied Physics Letters · 2020 · 38 citations

Natural Sciences, Materials Engineering, Materials Science +17

Room-temperature two-terminal magnetoresistance ratio reaching 0.1% in semiconductor-based lateral devices with <i>L</i>21-ordered Co2MnSi

K. Kudo, M. Yamada, Syuta Honda et al. · Applied Physics Letters · 2021 · 28 citations

Natural Sciences, Materials Engineering, Materials Science +15

Critical thickness of strained Si_1-xGe_x on Ge(111) and Ge-on-Si(111)

Md. Mahfuz Alam, Youya Wagatsuma, Kazuya Okada et al. · Applied Physics Express · 2019 · 15 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Crack formation in strained SiGe grown on Ge-on-Si (111) and its suppression by patterning substrates

Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada et al. · Materials Science in Semiconductor Processing · 2020 · 13 citations

Engineering, Materials Engineering, Materials Science +14