Thermoelectric Si1−<i>x</i>Ge<i>x</i> and Ge epitaxial films on Si(001) with controlled composition and strain for group IV element-based thermoelectric generators

Abstract

This study presents the material design of Si1−xGex epitaxial films/Si for thin film thermoelectric generators (TFTEGs) by investigating their thermoelectric properties. The thermoelectric films composed of group-IV elements are advantageous due to their compatibility with the Si process. We fabricated Si1−xGex epitaxial films with various controlled x values and strains using various growth methods. Ge epitaxial films without strains exhibited the highest thermoelectric power factor (∼47 μW cm−1 K−2) among various strain-controlled Si1−xGex (x ≠ 1) epitaxial films, which is higher at room temperature than SiGe alloy-based bulks ever reported. On the other hand, strained Si1−xGex epitaxial films showed an ultralow thermal conductivity of ∼2 W m−1 K−1, which is close to the value for amorphous Si. In addition to strained SiGe films with the ultralow thermal conductivity, unstrained Ge films with a high thermoelectric power factor can also be used for future TFTEGs by applying a nanostructuring technique. A preliminary TFTEG of Ge epitaxial films was realized, which generated a maximum power of ∼0.10 μW cm−2 under a temperature difference of 20 K. This demonstrates that epitaxial films composed of group-IV semiconductors are promising materials for TFTEG applications.