S. Hine

Experimental results and simulation analysis of 250 V super trench power MOSFET (STM)

T. Nitta, T. Minato, Maasa Yano et al. · 2002 · 46 citations

Experimental Results, Electrical Engineering, Simulation Analysis +10

The Surface Magnetism of Thick Fe Films Coated by MgO, MgF₂and Sb

S. Hine, Teruya Shinjo, Toshio Takada · Journal of the Physical Society of Japan · 1979 · 36 citations

Magnetic Properties, Engineering, Magnetic Resonance +18

Which is cooler, trench or multi-epitaxy? Cutting edge approach for the silicon limit by the super trench power MOS-FET (STM)

T. Minato, T. Nitta, A. Uenisi et al. · 2002 · 36 citations

Materials Engineering, Electrical Engineering, Engineering +12

A new level-shifting technique by divided RESURF structure

Takeshi Terashima, K. Shimizu, S. Hine · 2002 · 32 citations

Engineering, Computer-aided Design, Structural Optimization +16

A 0.35 μm trench gate MOSFET with an ultra low on state resistance and a high destruction immunity during the inductive switching

Atsushi Narazaki, Junya Maruyama, T. Kayumi et al. · 2002 · 23 citations

Trench Gate Width, Electrical Engineering, State Resistance +8