Masayuki Ichige

A 56-nm CMOS 99-${\hbox {mm}}^{2} $ 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput

Ken Takeuchi, Yasushi Kameda, Susumu Fujimura et al. · IEEE Journal of Solid-State Circuits · 2007 · 70 citations

Engineering, Computer Engineering, Electrical Engineering +14

A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput

Ken Takeuchi, Y. Kameda, Shinji Fujimura et al. · 2006 · 37 citations

Engineering, Computer Engineering, Electrical Engineering +16

A novel self-aligned shallow trench isolation cell for 90 nm 4 Gbit NAND flash EEPROMs

Masayuki Ichige, Yoshinori Takeuchi, K. Sugimae et al. · 2004 · 13 citations

Engineering, Computer Engineering, Electrical Engineering +16